Cite
MLA Citation
H.H. Lu et al.. “Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH3-plasma treated yittrium-oxynitride as interfacial passivation layer.” Microelectronics and reliability, vol. 56, 2016, pp. 17–21. http://access.bl.uk/ark:/81055/vdc_100030401793.0x00003b