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APA Citation
Wang, W., Jin, H., Dong, S., Zhong, L., & Han, Y. (2016). study of drain-extended NMOS under electrostatic discharge stress in 28 nm and 40 nm CMOS process. Solid-state electronics, 116, 80–87. http://access.bl.uk/ark:/81055/vdc_100030398571.0x000045