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HARVARD Citation
Wang, W. et al. (2016). Study of drain-extended NMOS under electrostatic discharge stress in 28 nm and 40 nm CMOS process. Solid-state electronics. pp. 80-87. [Online].
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Wang, W. et al. (2016). Study of drain-extended NMOS under electrostatic discharge stress in 28 nm and 40 nm CMOS process. Solid-state electronics. pp. 80-87. [Online].