Cite
MLA Citation
Binola K. Jebalin et al.. “The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs.” Microelectronics journal, vol. 46, no. 12, 2015, pp. 1387–1391. http://access.bl.uk/ark:/81055/vdc_100029859517.0x000061