Cite
HARVARD Citation
Jebalin, B. et al. (2015). The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs. Microelectronics journal. 46 (12), pp. 1387-1391. [Online].
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Jebalin, B. et al. (2015). The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs. Microelectronics journal. 46 (12), pp. 1387-1391. [Online].