An insulated gate bipolar transistor with surface n-type barrier*Project supported by the National High Technology Research and Development Program of China (No. 2014AA052601) and the National Natural Science Foundation of China (No. 51277060). (December 2015)

• Record Type: Journal Article
• Authors: Jiang 蒋, Mengxuan 梦轩; Shen 沈, Z. John 征; Wang 王, Jun 俊; Shuai 帅, Zhikang 智康; Yin 尹, Xin 新; Sun 孙, Bingbing 冰冰; Liao 廖, Linyuan 淋圆
• Is Part Of: Journal of semiconductors. Volume 36:Number 12(2015:Dec.)
• Publication Date: 2015-12
• Subjects: 2560; breakdown voltage -- conductivity modulation -- current density -- latch up -- IGBT; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/36/12/124004
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: This letter proposes a novel IGBT structure with an n-type barrier (NB-IGBT) formed on the silicon surface to enhance the conductivity modulation effect with a relatively simple fabrication process. TCAD simulation indicates that the NB-IGBT offers a current density 49% higher and turn-off losses 25% lower than a conventional field-stop IGBT (FS-IGBT) with a similar breakdown voltage, turn-off time and avalanche energy. Furthermore, the NB-IGBT exhibits extremely large transconductance, which is favorable to turn-on and turn-off. Therefore, the proposed IGBT offers an attractive option for high-voltage and large-power electronics applications.