Cite
HARVARD Citation
Lee, J. et al. (n.d.). Au-free AlGaN/GaN heterostructure field-effect transistor with recessed overhang ohmic contacts using a Ti/Al bilayer. Semiconductor science and technology. pp. 3393-52. [Online].
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Lee, J. et al. (n.d.). Au-free AlGaN/GaN heterostructure field-effect transistor with recessed overhang ohmic contacts using a Ti/Al bilayer. Semiconductor science and technology. pp. 3393-52. [Online].