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APA Citation
Lee, J., Kim, H., Kim, D., Han, S., Seo, K., & Cha, H. (n.d.). au-free AlGaN/GaN heterostructure field-effect transistor with recessed overhang ohmic contacts using a Ti/Al bilayer. Semiconductor science and technology, 30, 3393–52. http://access.bl.uk/ark:/81055/vdc_100026393189.0x000044