Cite

    Xiang-Dong Li et al.. “AlGaN Channel High Electron Mobility Transistors with an AlxGa1−xN/GaN Composite Buffer Layer*Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02308-002, and National Natural Science Foundation of China under Grant Nos 11435010 and 61474086..” Chinese physics letters, vol. 32, n.d., pp. 1214–. http://access.bl.uk/ark:/81055/vdc_100026019036.0x000060