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AlGaN Channel High Electron Mobility Transistors with an AlxGa1−xN/GaN Composite Buffer Layer*Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02308-002, and National Natural Science Foundation of China under Grant Nos 11435010 and 61474086. (July 2015)
Record Type:
Journal Article
Title:
AlGaN Channel High Electron Mobility Transistors with an AlxGa1−xN/GaN Composite Buffer Layer*Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02308-002, and National Natural Science Foundation of China under Grant Nos 11435010 and 61474086. (July 2015)
Main Title:
AlGaN Channel High Electron Mobility Transistors with an AlxGa1−xN/GaN Composite Buffer Layer*Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02308-002, and National Natural Science Foundation of China under Grant Nos 11435010 and 61474086.
<abstract> <title> <x content-type="archive" xml:space="preserve">Abstract</x> </title> <p>We report an AlGaN channel high electron mobility transistor (HEMT) on a sapphire substrate with a 1000-nm Al<sub>x</sub>Ga<sub>1−x</sub>N (x = 0−0.18)/GaN composite buffer layer. With a significant improvement of crystal quality, the device features a high product of n<sub>s</sub> · μ<sub>n</sub>. The AlGaN channel HEMTs presented show improved performance with respect to the conventional AlGaN channel HEMTs, including the on-resistance reduced from 31.2 to 8.1 Ω·mm, saturation drain current at 2 V gate bias promoted from 218 to 540 mA/mm, peak transconductance at 10 V drain bias promoted from 100 to a state-of-the-art value of 174 mS/mm, and reverse gate leakage current reduced from 1.85 × 10<sup>−3</sup> to 2.15 × 10<sup>−5</sup> mA/mm at V<sub>GD</sub> = −20 V.</p> </abstract>