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Li, X. et al. (n.d.). AlGaN Channel High Electron Mobility Transistors with an AlxGa1−xN/GaN Composite Buffer Layer*Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02308-002, and National Natural Science Foundation of China under Grant Nos 11435010 and 61474086.. Chinese physics letters. pp. 1214-. [Online].