Charge deposition model for investigating SE-microdose effect in trench power MOSFETs. (May 2015)

• Record Type: Journal Article
• Authors: Wan, Xin; Zhou, Weisong; Liu, Daoguang; Bo, Hanliang; Xu, Jun
• Is Part Of: Journal of semiconductors. Volume 36:Number 5(2015:May)
• Page Start: 2181
• Publication Date: 2015-05
• Subjects: Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/36/5/054003
• Languages: English
• ISSNs: 1674-4926

Abstract

<abstract> <title>Abstract</title> <p>It was demonstrated that heavy ions can induce large current—voltage (<italic>I–V</italic>) characteristics shift in commercial trench power MOSFETs, named single event microdose effect (SE-microdose effect). A model is presented to describe this effect. This model calculates the charge deposition by a single heavy ion hitting oxide and the subsequent charge transport under an electric field. Holes deposited at the SiO₂/Si interface by a Xe ion are calculated by using this model. The calculated results were then used in Sentaurus TCAD software to simulate a trench power MOSFET's <italic>I–V</italic> curve shift after a Xe ion has hit it. The simulation results are consistent with the related experiment's data. In the end, several factors which affect the SE-microdose effect in trench power MOSFETs are investigated by using this model.</p> </abstract>