Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films. Issue 24 (28th June 2015)

• Record Type: Journal Article
• Authors: Park, M. H.; Kim, H. J.; Kim, Y. J.; Moon, T.; Kim, K. D.; Lee, Y. H.; Hyun, S. D.; Hwang, C. S.
• Is Part Of: Journal of materials chemistry. Volume 3:Issue 24(2015)
• Page Start: 6291
• Page End: 6300
• Publication Date: 2015-06-28
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c5tc01074h
• Languages: English
• ISSNs: 2050-7526

Abstract

<abstract abstract-type="toc"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <graphic position="anchor" id="ga" xlink:href="ark:/27927/pgj1059fw86" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" />The effects of the internal field and conduction mechanism of carriers in ferroelectric Hf_0.5Zr_0.5O₂ thin films are systematically investigated by controlling the in-depth profile of oxygen vacancy concentrations.</p> </abstract>