Cite
HARVARD Citation
Park, M. et al. (2015). Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films. Journal of materials chemistry. 3 (24), pp. 6291-6300. [Online].
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Park, M. et al. (2015). Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films. Journal of materials chemistry. 3 (24), pp. 6291-6300. [Online].