Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films. Issue 24 (28th June 2015) - Park, M. H.
Abstract The effects of the internal field and conduction mechanism of carriers in ferroelectric Hf0.5Zr0.5O2 thin films are systematically investigated by controlling the in-depth profile of oxygen vacancy concentrations.