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APA Citation
Jeong, Y., Pearson, C., Kim, H., Park, M., Kim, H., Do, L., & Petty, M. C. (2015). solution-processed SiO2 gate insulator formed at low temperature for zinc oxide thin-film transistors1. RSC advances, 5(45), 36083–36087. http://access.bl.uk/ark:/81055/vdc_100025890253.0x000014