Solution-processed SiO2 gate insulator formed at low temperature for zinc oxide thin-film transistors1. Issue 45 (20th May 2015)
- Record Type:
- Journal Article
- Title:
- Solution-processed SiO2 gate insulator formed at low temperature for zinc oxide thin-film transistors1. Issue 45 (20th May 2015)
- Main Title:
- Solution-processed SiO2 gate insulator formed at low temperature for zinc oxide thin-film transistors1
- Authors:
- Jeong, Yesul
Pearson, Christopher
Kim, Hyun-Gwan
Park, Man-Young
Kim, Hongdoo
Do, Lee-Mi
Petty, Michael C. - Abstract:
- <abstract abstract-type="toc"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <graphic position="anchor" id="ga" xlink:href="ark:/27927/pgjn2gtt65" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" />A ZnO transistor with carrier mobility of 3 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> using a SiO<sub>2</sub> insulator formed at low-temperature (180 °C) from solution-processed perhydropolysilazane.</p> </abstract>
- Is Part Of:
- RSC advances. Volume 5:Issue 45(2015)
- Journal:
- RSC advances
- Issue:
- Volume 5:Issue 45(2015)
- Issue Display:
- Volume 5, Issue 45 (2015)
- Year:
- 2015
- Volume:
- 5
- Issue:
- 45
- Issue Sort Value:
- 2015-0005-0045-0000
- Page Start:
- 36083
- Page End:
- 36087
- Publication Date:
- 2015-05-20
- Subjects:
- Chemistry -- Periodicals
540.5 - Journal URLs:
- http://pubs.rsc.org/en/Journals/JournalIssues/RA ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/c5ra02989a ↗
- Languages:
- English
- ISSNs:
- 2046-2069
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8036.750300
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 3814.xml