Cite
HARVARD Citation
Jeong, Y. et al. (2015). Solution-processed SiO2 gate insulator formed at low temperature for zinc oxide thin-film transistors1. RSC advances. 5 (45), pp. 36083-36087. [Online].
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Jeong, Y. et al. (2015). Solution-processed SiO2 gate insulator formed at low temperature for zinc oxide thin-film transistors1. RSC advances. 5 (45), pp. 36083-36087. [Online].