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APA Citation
Lee, D. S., Laboutin, O., Cao, Y., Johnson, W., Beam, E., Ketterson, A., Schuette, M., Saunier, P., Kopp, D., Fay, P., Palacios, T., Krishna, S., & Plis, E. (n.d.). 317 GHz InAlGaN/GaN HEMTs with extremely low on‐resistance. Physica status solidi, 10(5), 827–830. http://access.bl.uk/ark:/81055/vdc_100024885731.0x00000c