317 GHz InAlGaN/GaN HEMTs with extremely low on‐resistance. Issue 5 (29th January 2013)

• Record Type: Journal Article
• Authors: Lee, Dong Seup; Laboutin, Oleg; Cao, Yu; Johnson, Wayne; Beam, Edward; Ketterson, Andrew; Schuette, Michael; Saunier, Paul; Kopp, David; Fay, Patrick; Palacios, Tomás; Krishna, Sanjay; Plis, Elena
• Is Part Of: Physica status solidi. Volume 10:Issue 5(2013:May)
• Page Start: 827
• Page End: 830
• Publication Date: 2013-01-29
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201200541
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>This paper reports depletion‐mode In_0.13Al_0.83Ga_0.04N/GaN high electron mobility transistors (HEMTs) on a SiC substrate with a record current gain cutoff frequency (f_T) of 317 GHz. Thanks to the combination of high electron mobility, regrown n⁺ InGaN/GaN ohmic contacts and scaled source‐to‐drain distance, the devices have an very low on‐resistance of 0.4 Ω·mm. This very low resistance enables a significant reduction of the transistor parasitic delay and devices with a peak f_T of 317 GHz have been demonstrated for a 26 nm gate length. The device performance is limited by a relatively thick top barrier which causes serious short‐channel effects (SCEs) in the devices with gate length below 50 nm. It is expected that a suppression of the SCEs will render further improvements in frequency performance in future devices. (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>