Cite
HARVARD Citation
Lee, D. et al. (n.d.). 317 GHz InAlGaN/GaN HEMTs with extremely low on‐resistance. Physica status solidi. 10 (5), pp. 827-830. [Online].
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Lee, D. et al. (n.d.). 317 GHz InAlGaN/GaN HEMTs with extremely low on‐resistance. Physica status solidi. 10 (5), pp. 827-830. [Online].