Over 550 V breakdown voltage of InAlN/GaN HEMT on Si. Issue 5 (27th March 2013)

• Record Type: Journal Article
• Authors: Saito, Hisashi; Takada, Yoshiharu; Kuraguchi, Masahiko; Yumoto, Miki; Tsuda, Kunio; Krishna, Sanjay; Plis, Elena
• Is Part Of: Physica status solidi. Volume 10:Issue 5(2013:May)
• Page Start: 824
• Page End: 826
• Publication Date: 2013-03-27
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201200608
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>InAlN/GaN high electron mobility transistor (HEMT) on Si substrate with a high breakdown voltage is reported. The observed off‐state breakdown voltage was over 550 V and the specific on‐state resistance was 0.7 mΩcm² in the fabricated device with the spacing between the gate and drain (L_gd) of 8 µm. After the measurement, the device was found not to be broken when it was observed by an optical microscope. The off‐state breakdown voltage might be about 550 V in the device with L_gd of 5 µm, because the increase of the off‐state leakage current was observed at the drain voltage of 550 V. If the off‐state breakdown voltage was proportional to L_gd, the speculated off‐state breakdown voltage from this result was 880 V in the device with L_gd of 8 µm. Therefore, InAlN/GaN HEMTs have potential for application as power electronics devices. (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>