Cite
HARVARD Citation
Saito, H. et al. (n.d.). Over 550 V breakdown voltage of InAlN/GaN HEMT on Si. Physica status solidi. 10 (5), pp. 824-826. [Online].
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Saito, H. et al. (n.d.). Over 550 V breakdown voltage of InAlN/GaN HEMT on Si. Physica status solidi. 10 (5), pp. 824-826. [Online].