Over 550 V breakdown voltage of InAlN/GaN HEMT on Si. Issue 5 (27th March 2013) - Saito, Hisashi
Abstract InAlN/GaN high electron mobility transistor (HEMT) on Si substrate with a high breakdown voltage is reported. The observed off‐state breakdown voltage was over 550 V and the specific on‐state resistance was 0.7 mΩcm2 in the fabricated device with the spacing between the gate and drain (Lgd) of 8 µm. After the measurement, the device was found not to be broken when it was observed by an optical microscope. The off‐state breakdown voltage might be about 550 V in the device with Lgd of 5 µm, because the increase of the off‐state leakage current was observed at the drain voltage of 550 V. If the off‐state breakdown voltage was proportional to Lgd, the speculated off‐state breakdown voltage from this result was 880 V in the device with Lgd of 8 µm. Therefore, InAlN/GaN HEMTs have potential for application as power electronics devices. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)