Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open‐Circuit Voltage in Cuprous Oxide Solar Cells. (23rd May 2014)

• Record Type: Journal Article
• Authors: Lee, Yun Seog; Chua, Danny; Brandt, Riley E.; Siah, Sin Cheng; Li, Jian V.; Mailoa, Jonathan P.; Lee, Sang Woon; Gordon, Roy G.; Buonassisi, Tonio
• Is Part Of: Advanced materials. Volume 26:Number 27(2014)
• Page Start: 4704
• Page End: 4710
• Publication Date: 2014-05-23
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201401054
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201401054-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>The power conversion efficiency</bold> of solar cells based on copper (I) oxide (Cu₂O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga₂O₃) layer. By improving band‐alignment and passivating interface defects, the device exhibits an open‐circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pghrq65v0n" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>