Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open‐Circuit Voltage in Cuprous Oxide Solar Cells. (23rd May 2014) - Lee, Yun Seog
Abstract The power conversion efficiency of solar cells based on copper (I) oxide (Cu2O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga2O3) layer. By improving band‐alignment and passivating interface defects, the device exhibits an open‐circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.