Cite
HARVARD Citation
Lee, Y. et al. (2014). Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open‐Circuit Voltage in Cuprous Oxide Solar Cells. Advanced materials. pp. 4704-4710. [Online].
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Lee, Y. et al. (2014). Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open‐Circuit Voltage in Cuprous Oxide Solar Cells. Advanced materials. pp. 4704-4710. [Online].