Cite
MLA Citation
Daisuke Iida et al.. “Analysis of strain relaxation process in GaInN/GaN heterostructure by in situ X‐ray diffraction monitoring during metalorganic vapor‐phase epitaxial growth.” Physica status solidi, vol. 7, no. 3, n.d., pp. 211–214. http://access.bl.uk/ark:/81055/vdc_100024752614.0x00004b