Cite
MLA Citation
Byeong‐Geun Son et al.. “High‐performance In–Zn–O thin‐film transistors with a soluble processed ZrO2 gate insulator.” Physica status solidi, vol. 7, no. 7, n.d., pp. 485–488. http://access.bl.uk/ark:/81055/vdc_100024752614.0x00000c