High‐performance In–Zn–O thin‐film transistors with a soluble processed ZrO2 gate insulator. Issue 7 (12th June 2013)

• Record Type: Journal Article
• Authors: Son, Byeong‐Geun; Je, So Yeon; Kim, Hyo Jin; Lee, Chul‐Kyu; Lee, Chang‐Kyu; Hwang, Ah Young; Won, Ju Yeon; Song, Ji Hun; Choi, Rino; Jeong, Jae Kyeong
• Is Part Of: Physica status solidi. Volume 7:Issue 7(2013:Jul.)
• Page Start: 485
• Page End: 488
• Publication Date: 2013-06-12
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201307128
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Spin‐coated zirconium oxide films were used as a gate dielectric for low‐voltage, high performance indium zinc oxide (IZO) thin‐film transistors (TFTs). The ZrO₂ films annealed at 400 °C showed a low gate leakage current density of 2 × 10^–8 A/cm² at an electric field of 2 MV/cm. This was attributed to the low impurity content and high crystalline quality. Therefore, the IZO TFTs with a soluble ZrO₂ gate insulator exhibited a high field effect mobility of 23.4 cm²/V s, excellent subthreshold gate swing of 70 mV/decade and a reasonable <italic>I</italic>_on/off ratio of ∼10⁶. These TFTs operated at low voltages (∼3.0 V) and showed high drain current drive capability, enabling oxide TFTs with a soluble processed high‐<italic>k</italic> dielectric for use in backplane electronics for low‐power mobile display applications. (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>