Cite
HARVARD Citation
Son, B. et al. (n.d.). High‐performance In–Zn–O thin‐film transistors with a soluble processed ZrO2 gate insulator. Physica status solidi. 7 (7), pp. 485-488. [Online].
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Son, B. et al. (n.d.). High‐performance In–Zn–O thin‐film transistors with a soluble processed ZrO2 gate insulator. Physica status solidi. 7 (7), pp. 485-488. [Online].