Cite
MLA Citation
Byung-Eun Park et al., editors. Ferroelectric-gate field effect transistor memories : device physics and applications. Dordrecht : Springer, 2016. http://access.bl.uk/ark:/81055/vdc_100078356761.0x000001
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Byung-Eun Park et al., editors. Ferroelectric-gate field effect transistor memories : device physics and applications. Dordrecht : Springer, 2016. http://access.bl.uk/ark:/81055/vdc_100078356761.0x000001