Cite
HARVARD Citation
Park, B. et al. (eds.) (2016) Ferroelectric-gate field effect transistor memories : device physics and applications. [Online]. Dordrecht : Springer. Available from: http://access.bl.uk/ark:/81055/vdc_100078356761.0x000001
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Park, B. et al. (eds.) (2016) Ferroelectric-gate field effect transistor memories : device physics and applications. [Online]. Dordrecht : Springer. Available from: http://access.bl.uk/ark:/81055/vdc_100078356761.0x000001