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APA Citation
Unknown (2017). SiGe and Si strained-layer epitaxy for silicon heterostructure devices. Place of publication not identified : CRC Press. http://access.bl.uk/ark:/81055/vdc_100052741555.0x000001
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Unknown (2017). SiGe and Si strained-layer epitaxy for silicon heterostructure devices. Place of publication not identified : CRC Press. http://access.bl.uk/ark:/81055/vdc_100052741555.0x000001