SiGe and Si strained-layer epitaxy for silicon heterostructure devices. (2017)

• Record Type: Book
• Uniform Title: Silicon heterostructure handbook.
• Further Information: Note: Edited by John D. Cressler.
• Other Names: Cressler, John D
• Publisher Details: Place of publication not identified : CRC Press
• Publication Date: 2017
• Extent: 1 online resource (264 pages), (24 illustrations)
• Subjects: 621.381528; Bipolar transistors -- Materials; Heterostructures; Silicon -- Electric properties; Epitaxy
• Languages: English
• ISBNs: 9781351834797; 1351834797
• Access Rights: Legal Deposit; Only available on premises controlled by the deposit library and to one user at any one time; The Legal Deposit Libraries (Non-Print Works) Regulations (UK).
• Access Usage: Restricted: Printing from this resource is governed by The Legal Deposit Libraries (Non-Print Works) Regulations (UK) and UK copyright law currently in force.