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2. (20$ \bar 2 $1) MOVPE and HVPE GaN grown on 2″ patterned sapphire substrates. Issue 3 (22nd January 2014)

4. 0.4 J/10 ns/10 kHz‐4 kW coherent beam combined laser using stimulated Brillouin scattering phase conjugation mirrors for industrial applications. Issue 6 (6th May 2013)

8. 2D‐localization and delocalization effects in quantum Hall regime in HgTe wide quantum wells. Issue 7 (16th March 2016)

9. 2″‐4″ diameter GaN‐on‐sapphire substrates free of wafer bow at all temperatures. Issue 3 (5th March 2014)

10. 3.2 mΩcm2 enhancement‐mode GaN MOSFETs with breakdown voltage of 800 V. Issue 5 (29th March 2016)