(111) InAs/GaSb type‐II strained layer superlattice material for high operating temperature detection. Issue 5 (29th January 2013)

• Record Type: Journal Article
• Authors: Plis, Elena; Klein, Brianna; Myers, Stephen; Gautam, Nutan; Krishna, Sanjay; Krishna, Sanjay; Plis, Elena
• Is Part Of: Physica status solidi. Volume 10:Issue 5(2013:May)
• Page Start: 748
• Page End: 751
• Publication Date: 2013-01-29
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201200605
• Languages: English
• ISSNs: 1862-6351

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>We report on the detailed radiometric characterization of the mid‐wave infrared InAs/GaSb type‐II strained layer superlattice detectors grown on GaSb (111) substrate. A red shift of 1.7 μm (at 295 K) was observed with respect to a similar detector grown on GaSb (100) substrate. We have measured, at 295 K and λ_{100% cut‐off} = 5.6 μm, a dark current density of 0.53 A/cm² (at ‐50 mV) and a Johnson noise limited D* of 8.5 x 10⁹Jones, which are superior values to state‐of‐the‐art T2SL detectors with the same (pin) design grown on conventional GaSb (100) substrates and operating in a similar wavelength range. (© 2013 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>