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1. Two carrier localizations in GaN/AlGaN multiquantum wells investigated by temperature dependent photoluminescence. Issue 5 (22nd December 2015)

2. Design of GaN‐based surface plasmon LEDs to enhance the modulation bandwidth and light output. Issue 5 (22nd December 2015)

3. Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time‐resolved terahertz and photoluminescence spectroscopy. Issue 5 (3rd February 2016)

4. Quasi‐one‐dimensional gold grating with Si3N4 cap layer as optical coupler for AlGaN/GaN quantum well infrared photodetector. Issue 5 (22nd December 2015)

5. Green laser diodes with low operation voltage obtained by suppressing carbon impurity in AlGaN: Mg cladding layer. Issue 5 (22nd December 2015)

6. Impact of interface traps on switching behavior of normally‐OFF AlGaN/GaN MOS‐HEMTs. Issue 5 (3rd February 2016)

7. Nitride Semiconductors. Issue 5 (May 2016)

9. Analysis of the Hall‐effect data on Mn‐doped GaAs with taking into account the Hall factor for nearest‐neighbor hopping conduction. Issue 5 (2nd May 2016)

10. The efficiency droop impact of GaN‐based LEDs on the performance of OFDM visible light communication system. Issue 5 (16th March 2016)