1. "Limiting power cycling stress in power MOSFETs by active thermal control". (August 2020) Authors: Magnone, Paolo; Abedini, Hossein; Petucco, Andrea Journal: Microelectronics and reliability Issue: Volume 111(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. 0.5 μm GaN RF power bar technology space evaluation. (November 2020) Authors: Van de Casteele, J.; Stuhldreier, H.; Bouw, D.; Gourdon, C.; Raoult, M.; Durand, E.; Van Den Berghe, S.; Hollmer, M.; Grunwald, M.; Lambert, B.; Blanck, H.; Barnes, A. Journal: Microelectronics and reliability Issue: Volume 114(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. 1200V 4H-SiC trench MOSFET with superior figure of merit and suppressed quasi-saturation effect. (August 2021) Authors: Fu, Hao; Wei, Zhaoxiang; Liu, Siyang; Wei, Jiaxing; Xu, Hang; Ni, Lihua; Yang, Zhuo; Sun, Weifeng Journal: Microelectronics and reliability Issue: Volume 123(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. 16-Channel micro magnetic flux sensor array for IGBT current distribution measurement. Issue 9 (August 2015) Authors: Tomonaga, H.; Tsukuda, M.; Okoda, S.; Noda, R.; Tashiro, K.; Omura, I. Journal: Microelectronics and reliability Issue: Volume 55:Issue 9/10(2015) Page Start: 1357 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. 1D and Q2D thermal resistance analysis of micro channel structure and flat plate heat pipe. (May 2017) Authors: Chen, Shao-Wen; Chiu, Wan-June; Lin, Min-Song; Kuo, Feng-Jiun; Chai, Min-Lun; Lee, Jin-Der; Wang, Jong-Rong; Lin, Hao-Tzu; Lin, Wei-Keng; Shih, Chunkuan Journal: Microelectronics and reliability Issue: Volume 72(2017) Page Start: 103 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. 1T-NOR Flash memory after endurance degradation: An advanced TCAD simulation. (November 2022) Authors: Matteo, F.; Simola, R.; Postel-Pellerin, J.; Coulié, K. Journal: Microelectronics and reliability Issue: Volume 138(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. 200 V Fast Recovery Epitaxial Diode with superior ESD capability. (September 2016) Authors: Irace, A.; Maresca, L.; Mirone, P.; Riccio, M.; Breglio, G.; Bellemo, L.; Carta, R.; Naretto, M.; El Baradai, N.; Para, I.; Di Santo, N. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 440 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. 200 V Fast Recovery Epitaxial Diode with superior ESD capability. (September 2016) Authors: Irace, A.; Maresca, L.; Mirone, P.; Riccio, M.; Breglio, G.; Bellemo, L.; Carta, R.; Naretto, M.; El Baradai, N.; Para, I.; Di Santo, N. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 440 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. 20 GHz on-chip measurement of ESD waveform for system level analysis. Issue 11 (November 2015) Authors: Caignet, F.; Nolhier, N.; Bafleur, M.; Wang, A.; Mauran, N. Journal: Microelectronics and reliability Issue: Volume 55:Issue 11(2015) Page Start: 2276 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. 3-D simulation study of single event effects of SiGe heterojunction bipolar transistor in extreme environment. Issue 8 (July 2015) Authors: Zhang, Jin-xin; He, Chao-hui; Guo, Hong-xia; Tang, Du; Xiong, Cen; Li, Pei; Wang, Xin Journal: Microelectronics and reliability Issue: Volume 55:Issue 8(2015) Page Start: 1180 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗