1. Evolution of on-resistance (RON) and threshold voltage (VTH) in GaN HEMTs during switch-mode operation. (May 2018) Authors: Chini, Alessandro; Iucolano, Ferdinando Journal: Materials science in semiconductor processing Issue: Volume 78(2018) Page Start: 127 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Experimental and numerical analysis of VTH and RON drifts in E-mode GaN HEMTs during switch-mode operation. (1st August 2019) Authors: Chini, Alessandro; Iucolano, Ferdinando Journal: Materials science in semiconductor processing Issue: Volume 98(2019) Page Start: 77 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗