2D Monte Carlo Simulation of Hole and Electron Transport in Strained Si. Issue 1 (1998)

Record Type:: Journal Article
Title:: 2D Monte Carlo Simulation of Hole and Electron Transport in Strained Si. Issue 1 (1998)
Main Title:: 2D Monte Carlo Simulation of Hole and Electron Transport in Strained Si
Authors:: Formicone, Gabriele F.
Vasileska, Dragica
Ferry, David K.
Abstract:
Is Part Of:: VLSI design. Volume 6:Issue 1/4(1998)
Journal:: VLSI design
Issue:: Volume 6:Issue 1/4(1998)
Issue Display:: Volume 6, Issue 1/4 (1998)
Year:: 1998
Volume:: 6
Issue:: 1/4
Issue Sort Value:: 1998-0006-NaN-0000
Page Start:: 167
Page End:: 171
Publication Date:: 1998
Subjects:: Integrated circuits -- Very large scale integration -- Periodicals
621.395
Journal URLs:: https://www.hindawi.com/journals/vlsi/ ↗
DOI:: 10.1155/1998/67849 ↗
Languages:: English
ISSNs:: 1065-514X
Deposit Type:: Legaldeposit
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:: British Library HMNTS - ELD Digital store
Ingest File:: 10204.xml