1064 nm InGaAsP multi-junction laser power converters. (June 2020)

• Record Type: Journal Article
• Authors: Yin, Jiajing; Sun, Yurun; Yu, Shuzhen; Zhao, Yongming; Li, Rongwei; Dong, Jianrong
• Is Part Of: Journal of semiconductors. Volume 41:Number 6(2020)
• Publication Date: 2020-06
• Subjects: InGaAsP -- multi-junction laser power converter -- conversion efficiency; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/41/6/062303
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: Laser photovoltaic devices converting 1064 nm light energy into electric energy present a promising prospect in wireless energy transmission due to the commercial availability of high power 1064 nm lasers with very small divergence. Besides their high conversion efficiency, a high output voltage is also expected in a laser energy transmission system. Meanwhile, 1064 nm InGaAsP multi-junction laser power converters have been developed using p + -InGaAs/n + -InGaAs tunnel junctions to connect sub-cells in series to obtain a high output voltage. The triple-junction laser power converter structures are grown on p-type InP substrates by metal-organic chemical vapor deposition (MOCVD), and InGaAsP laser power converters are fabricated by conventional photovoltaic device processing. The room-temperature I – V measurements show that the 1 × 1 cm 2 triple-junction InGaAsP laser power converters demonstrate a conversion efficiency of 32.6% at a power density of 1.1 W/cm 2, with an open-circuit voltage of 2.16 V and a fill factor of 0.74. In this paper, the characteristics of the laser power converters are analyzed and ways to improve the conversion efficiency are discussed.