ISSN: 0026-2714 - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

ISSN 0026-2714

1. "Limiting power cycling stress in power MOSFETs by active thermal control". (August 2020)

Authors:: Magnone, Paolo; Abedini, Hossein; Petucco, Andrea
Journal:: Microelectronics and reliability
Issue:: Volume 111(2020)
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Record Type:: Journal Article
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2. 0.5 μm GaN RF power bar technology space evaluation. (November 2020)

Authors:: Van de Casteele, J.; Stuhldreier, H.; Bouw, D.; Gourdon, C.; Raoult, M.; Durand, E.; Van Den Berghe, S.; Hollmer, M.; Grunwald, M.; Lambert, B.; Blanck, H.; Barnes, A.
Journal:: Microelectronics and reliability
Issue:: Volume 114(2020)
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Record Type:: Journal Article
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3. 1200V 4H-SiC trench MOSFET with superior figure of merit and suppressed quasi-saturation effect. (August 2021)

Authors:: Fu, Hao; Wei, Zhaoxiang; Liu, Siyang; Wei, Jiaxing; Xu, Hang; Ni, Lihua; Yang, Zhuo; Sun, Weifeng
Journal:: Microelectronics and reliability
Issue:: Volume 123(2021)
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Record Type:: Journal Article
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4. 16-Channel micro magnetic flux sensor array for IGBT current distribution measurement. Issue 9 (August 2015)

Authors:: Tomonaga, H.; Tsukuda, M.; Okoda, S.; Noda, R.; Tashiro, K.; Omura, I.
Journal:: Microelectronics and reliability
Issue:: Volume 55:Issue 9/10(2015)
Page Start:: 1357
Record Type:: Journal Article
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5. 1D and Q2D thermal resistance analysis of micro channel structure and flat plate heat pipe. (May 2017)

Authors:: Chen, Shao-Wen; Chiu, Wan-June; Lin, Min-Song; Kuo, Feng-Jiun; Chai, Min-Lun; Lee, Jin-Der; Wang, Jong-Rong; Lin, Hao-Tzu; Lin, Wei-Keng; Shih, Chunkuan
Journal:: Microelectronics and reliability
Issue:: Volume 72(2017)
Page Start:: 103
Record Type:: Journal Article
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6. 1T-NOR Flash memory after endurance degradation: An advanced TCAD simulation. (November 2022)

Authors:: Matteo, F.; Simola, R.; Postel-Pellerin, J.; Coulié, K.
Journal:: Microelectronics and reliability
Issue:: Volume 138(2022)
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Record Type:: Journal Article
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7. 200 V Fast Recovery Epitaxial Diode with superior ESD capability. (September 2016)

Authors:: Irace, A.; Maresca, L.; Mirone, P.; Riccio, M.; Breglio, G.; Bellemo, L.; Carta, R.; Naretto, M.; El Baradai, N.; Para, I.; Di Santo, N.
Journal:: Microelectronics and reliability
Issue:: Volume 64(2016)
Page Start:: 440
Record Type:: Journal Article
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8. 200 V Fast Recovery Epitaxial Diode with superior ESD capability. (September 2016)

Authors:: Irace, A.; Maresca, L.; Mirone, P.; Riccio, M.; Breglio, G.; Bellemo, L.; Carta, R.; Naretto, M.; El Baradai, N.; Para, I.; Di Santo, N.
Journal:: Microelectronics and reliability
Issue:: Volume 64(2016)
Page Start:: 440
Record Type:: Journal Article
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9. 20 GHz on-chip measurement of ESD waveform for system level analysis. Issue 11 (November 2015)

Authors:: Caignet, F.; Nolhier, N.; Bafleur, M.; Wang, A.; Mauran, N.
Journal:: Microelectronics and reliability
Issue:: Volume 55:Issue 11(2015)
Page Start:: 2276
Record Type:: Journal Article
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10. 3-D simulation study of single event effects of SiGe heterojunction bipolar transistor in extreme environment. Issue 8 (July 2015)

Authors:: Zhang, Jin-xin; He, Chao-hui; Guo, Hong-xia; Tang, Du; Xiong, Cen; Li, Pei; Wang, Xin
Journal:: Microelectronics and reliability
Issue:: Volume 55:Issue 8(2015)
Page Start:: 1180
Record Type:: Journal Article
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