Is Part Of: Solid-state electronics. Volume 193(2022) - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Is Part Of Solid-state electronics. Volume 193(2022)

1. A multi-energy level agnostic approach for defect generation during TDDB stress. (July 2022)

Authors:: Vici, Andrea; Degraeve, Robin; Kaczer, Ben; Franco, Jacopo; Van Beek, Simon; De Wolf, Ingrid
Journal:: Solid-state electronics
Issue:: Volume 193(2022)
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Record Type:: Journal Article
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2. A unified 2-D model for nanowire junctionless accumulation and inversion mode MOSFET in quasi-ballistic regime. (July 2022)

Authors:: Baral, Kamalaksha; Singh, Prince Kumar; Kumar, Sanjay; Singh, Ashish Kumar; Jarwal, Deepak Kumar; Jit, Satyabrata
Journal:: Solid-state electronics
Issue:: Volume 193(2022)
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3. Edge modes and their conductance in narrow nanoribbons of 2D materials in a topological phase. (July 2022)

Authors:: Sverdlov, Viktor; Seiler, Heribert; El-Sayed, Al-Moatasem Bellah; Illarionov, Yury; Kosina, Hans
Journal:: Solid-state electronics
Issue:: Volume 193(2022)
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4. Electron mobility distribution in FD-SOI MOSFETs using a NEGF-Poisson approach. (July 2022)

Authors:: DehdashtiAkhavan, Nima; Antonio Umana-Membreno, Gilberto; Gu, Renjie; Antoszewski, Jarek; Faraone, Lorenzo; Cristoloveanu, Sorin
Journal:: Solid-state electronics
Issue:: Volume 193(2022)
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5. Experiment and analysis of repetitive avalanche low-current stress on 4H-SiC power devices. (July 2022)

Authors:: Yuan, Hao; Liu, Yancong; Luo, Jingtao; He, Xiaoning; Tang, Xiaoyan; Zhang, Tingsong; Zhang, Yimen; Zhang, Yuming; Song, Qingwen
Journal:: Solid-state electronics
Issue:: Volume 193(2022)
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6. Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures. (July 2022)

Authors:: Catapano, E.; Aprà, A.; Cassé, M.; Gaillard, F.; de Franceschi, S.; Meunier, T.; Vinet, M.; Ghibaudo, G.
Journal:: Solid-state electronics
Issue:: Volume 193(2022)
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7. Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs. (July 2022)

Authors:: Sánchez-Martín, H.; Íñiguez-de-la-Torre, I.; García-Sánchez, S.; Mateos, J.; González, T.
Journal:: Solid-state electronics
Issue:: Volume 193(2022)
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8. On the breakdown voltage temperature dependence of high-voltage power diodes passivated with diamond-like carbon. (July 2022)

Authors:: Balestra, Luigi; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Dobrzyńska, Jagoda; Vobecký, Jan
Journal:: Solid-state electronics
Issue:: Volume 193(2022)
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9. Scanning Probe Microscopy nanoscale electrical characterization of AlGaN/GaN grown on structured GaN templates. (July 2022)

Authors:: Szyszka, Adam; Wośko, Mateusz; Stafiniak, Andrzej; Prażmowska, Joanna; Paszkiewicz, Regina
Journal:: Solid-state electronics
Issue:: Volume 193(2022)
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10. Si/Si0.7Ge0.3 A2RAM nanowires fabrication and characterization for 1T-DRAM applications. (July 2022)

Authors:: Lacord, J.; Tcheme Wakam, F.; Chalupa, Z.; Hartmann, J.-M.; Besson, P.; Loup, V.; Vizioz, C.; Brevard, L.; Aussenac, F.; Mescot, X.; Lee, K.; Bawedin, M.
Journal:: Solid-state electronics
Issue:: Volume 193(2022)
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Record Type:: Journal Article
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