Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs. (July 2022)

• Record Type: Journal Article
• Authors: Sánchez-Martín, H.; Íñiguez-de-la-Torre, I.; García-Sánchez, S.; Mateos, J.; González, T.
• Is Part Of: Solid-state electronics. Volume 193(2022)
• Publication Date: 2022-07
• Subjects: AlGaN/GaN HEMT -- Monte Carlo -- Thermal effects -- Thermal resistance -- Heat-conduction equation -- Small-signal equivalent circuit; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2022.108289
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: A Monte Carlo device simulator coupled with thermal algorithms was calibrated to reproduce measurements of HEMTs. Monte Carlo simulations are able to reproduce the general trend of the small-signal equivalent circuit parameters. Gate-to-source capacitance is found to be decreased due to heating effects. Heat conduction equation allows to identify the exact location of the hotspots below the transistor gate. Abstract: The influence of thermal effects in AlGaN/GaN HEMTs is studied by means of Monte Carlo simulations. Measured output and transfer characteristics of a transistor are well reproduced using two techniques, a thermal-resistance method and an electrothermal model which solves the steady-state heat-conduction equation. The validity of the model to reproduce the experimental results is checked in two-terminal structures and transistors. Both methods are also employed to investigate in AC regime in terms of the elements of the small-signal equivalent circuit, providing a good agreement with experimental values, with no significant differences between the models. Apart from the expected decrease of transconductance and drain conductance, the gate to source capacitance is also found to be lowered by heating effects.