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- 621.38152 56
- Semiconducteurs -- Périodiques 56
- Semiconductors -- Periodicals 56
- Active silicon -- Screen printing -- Printed transistor -- Current switches -- Charge activated energy -- Variable temperature -- Bias stressing -- Reliability -- Flexible substrate 2
- AlGaN/GaN high electron mobility transistor (HEMT) -- Bell-shaped gm -- gm collapse -- gm roll off -- Nonlinear source resistance -- Nonlinear drain resistance -- Thermal effects 2
- AlGaN/GaN on SiC and AlGaAs/InGaAs based high electron mobility transistors (HEMTs) -- Thermal effect -- Device behavior -- DC and RF parameters -- And multibias 2
- Amorphous InGaZnO (a-IGZO) -- Thin film transistor (TFT) -- Thermal stability -- Ambient gas 2
- CMOS image sensor -- Time-of-flight (ToF) -- Charge transfer -- Analytical modeling -- LDPD 2
- Compact modeling -- GIZO -- TFT transistors -- Parameter extraction 2
- GaN -- Graphene -- LED -- ZnO -- Nanorods 2