Is Part Of: Solid-state electronics. Volume 123(2016) - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Is Part Of Solid-state electronics. Volume 123(2016)

1. A high efficiency C-band internally-matched harmonic tuning GaN power amplifier. (September 2016)

Authors:: Lu, Y.; Zhao, B.C.; Zheng, J.X.; Zhang, H.S.; Zheng, X.F.; Ma, X.H.; Hao, Y.; Ma, P.J.
Journal:: Solid-state electronics
Issue:: Volume 123(2016)
Page Start:: 96
Record Type:: Journal Article
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2. A high efficiency C-band internally-matched harmonic tuning GaN power amplifier. (September 2016)

Authors:: Lu, Y.; Zhao, B.C.; Zheng, J.X.; Zhang, H.S.; Zheng, X.F.; Ma, X.H.; Hao, Y.; Ma, P.J.
Journal:: Solid-state electronics
Issue:: Volume 123(2016)
Page Start:: 96
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

3. Analysis of ballistic and quasi-ballistic hole transport properties in germanium nanowires based on an extended "Top of the Barrier" model. (September 2016)

Authors:: Tanaka, Hajime; Suda, Jun; Kimoto, Tsunenobu
Journal:: Solid-state electronics
Issue:: Volume 123(2016)
Page Start:: 143
Record Type:: Journal Article
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4. Analysis of ballistic and quasi-ballistic hole transport properties in germanium nanowires based on an extended "Top of the Barrier" model. (September 2016)

Authors:: Tanaka, Hajime; Suda, Jun; Kimoto, Tsunenobu
Journal:: Solid-state electronics
Issue:: Volume 123(2016)
Page Start:: 143
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

5. Analytical model of LDMOS with a double step buried oxide layer. (September 2016)

Authors:: Yuan, Song; Duan, Baoxing; Cao, Zhen; Guo, Haijun; Yang, Yintang
Journal:: Solid-state electronics
Issue:: Volume 123(2016)
Page Start:: 6
Record Type:: Journal Article
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6. Analytical model of LDMOS with a double step buried oxide layer. (September 2016)

Authors:: Yuan, Song; Duan, Baoxing; Cao, Zhen; Guo, Haijun; Yang, Yintang
Journal:: Solid-state electronics
Issue:: Volume 123(2016)
Page Start:: 6
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

7. Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures. (September 2016)

Authors:: Oliveira, Alberto Vinicius de; Agopian, Paula Ghedini Der; Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor; Collaert, Nadine; Thean, Aaron
Journal:: Solid-state electronics
Issue:: Volume 123(2016)
Page Start:: 124
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

8. Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures. (September 2016)

Authors:: Oliveira, Alberto Vinicius de; Agopian, Paula Ghedini Der; Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor; Collaert, Nadine; Thean, Aaron
Journal:: Solid-state electronics
Issue:: Volume 123(2016)
Page Start:: 124
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

9. Comprehensive behavioral model of dual-gate high voltage JFET and pinch resistor. (September 2016)

Authors:: Banáš, Stanislav; Paňko, Václav; Dobeš, Josef; Hanyš, Petr; Divín, Jan
Journal:: Solid-state electronics
Issue:: Volume 123(2016)
Page Start:: 133
Record Type:: Journal Article
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10. Comprehensive behavioral model of dual-gate high voltage JFET and pinch resistor. (September 2016)

Authors:: Banáš, Stanislav; Paňko, Václav; Dobeš, Josef; Hanyš, Petr; Divín, Jan
Journal:: Solid-state electronics
Issue:: Volume 123(2016)
Page Start:: 133
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗