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- 621.38152 27
- Semiconducteurs -- Périodiques 27
- Semiconductors -- Periodicals 27
- 3-D compact model -- Triple-gate JLT -- Nanowire JLT -- SCE -- Fin height capacitance -- Threshold voltage 2
- ALD -- Metal gate -- Work function -- CMOS device 2
- AlGaN/GaN -- PECVD -- Silicon dioxide -- Normally-off -- Recessed-gate 2
- GaN/AlGaN -- HEMT -- Scaling 2
- Interface trap -- InGaAs-OI MOSFETs -- III–V -- Subthreshold current model 2
- MOS -- Fowler–Nordheim (FN) tunneling current -- Vertical optimization -- FN parameters (A, B, mox, msc, ϕB, Vcorr) 2
- MOSFET -- FinFETs -- Body spacer -- STI variation -- Fin height variation -- STI recess 2