11. (Invited) Silicon Carbide as a Robust Neural Interface. (23rd August 2016) Authors: Frewin, Christopher L.; Bernardin, Evans E.; Deku, Felix; Everly, Richard; Hassan, Jawad; Pancrazio, Joseph J.; Saddow, Stephen E. Journal: ECS transactions Issue: Volume 75:Number 12(2016) Page Start: 39 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
12. (Invited) Simulation of the Effects of As-Grown Defects on GaN-Based Power HEMTs. (23rd August 2016) Authors: Mukherjee, Shrijit; Patrick, Erin; Law, Mark E; Ren, Fan; Pearton, Stephen J. Journal: ECS transactions Issue: Volume 75:Number 12(2016) Page Start: 107 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
13. (Invited) Study of Minority Carrier Lifetime Killer by Synchrotron X-Ray Topography. (23rd August 2016) Authors: Goue, Ouloide Yannick; Guo, Jianqiu; Yang, Yu; Raghothamachar, Balaji; Dudley, Michael Journal: ECS transactions Issue: Volume 75:Number 12(2016) Page Start: 215 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
14. (Invited) Study on the Role of Thermal Stress on Prismatic Slip of Dislocations in 4H-SiC Crystals Grown by PVT Method. (23rd August 2016) Authors: Guo, Jianqiu; Yang, Yu; Goue, Ouloide Yannick; Raghothamachar, Balaji; Dudley, Michael Journal: ECS transactions Issue: Volume 75:Number 12(2016) Page Start: 163 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
15. (Invited) Wide Band-Gap on Its Hard Way up - The Trouble Starts Just Outside the Chip. (23rd August 2016) Authors: Kaminski, Nando Journal: ECS transactions Issue: Volume 75:Number 12(2016) Page Start: 21 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
16. 4H-SiC V-Groove Trench MOSFETs with Low Specific On-State Resistance and High Reliability. (23rd August 2016) Authors: Mikamura, Yasuki; Uchida, Kosuke; Saitoh, Yu; Hiyoshi, Toru; Masuda, Takeyoshi; Tsuno, Takashi Journal: ECS transactions Issue: Volume 75:Number 12(2016) Page Start: 191 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
17. Advances in AlGaN/GaN HEMT Surface Passivation. (23rd August 2016) Authors: Koehler, Andrew D.; Tadjer, Marko J.; Anderson, Travis J; Chojecki, P.; Hobart, Karl D; Kub, Francis J Journal: ECS transactions Issue: Volume 75:Number 12(2016) Page Start: 99 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
18. Carbon-Doped GaN on SiC Materials for Low-Memory-Effect Devices. (23rd August 2016) Authors: Chen, Jr-Tai; Janzén, Erik; Rorsman, Niklas; Thorsell, Mattias; Andersson, Mats; Kordina, Olof Journal: ECS transactions Issue: Volume 75:Number 12(2016) Page Start: 61 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
19. Characterization and Comparison of Planar and Trench Silicon Carbide (SiC) Power MOSFETs. (23rd August 2016) Authors: Wang, Zhiqiang; Chinthavali, Madhu; Campbell, Steven Journal: ECS transactions Issue: Volume 75:Number 12(2016) Page Start: 145 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
20. Characterization of Interface State Density of SiO2/SiC (000-1) Based on Oxygen Concentration at the Interface during Thermal Oxidation. (23rd August 2016) Authors: Hasunuma, Ryu; Hanasato, Kohei; Yamabe, Kikuo Journal: ECS transactions Issue: Volume 75:Number 12(2016) Page Start: 201 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗