Carbon-Doped GaN on SiC Materials for Low-Memory-Effect Devices. (23rd August 2016)

• Record Type: Journal Article
• Authors: Chen, Jr-Tai; Janzén, Erik; Rorsman, Niklas; Thorsell, Mattias; Andersson, Mats; Kordina, Olof
• Is Part Of: ECS transactions. Volume 75:Number 12(2016)
• Page Start: 61
• Page End: 65
• Publication Date: 2016-08-23
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07512.0061ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : AlGaN/GaN on SiC HEMT structures suitable for high power, high frequency applications are demonstrated. The material manifests record breaking thermal management and electron mobility. Moreover, thanks to the fact that the buffer layer is doped with carbon, the memory effect of processed devices is very low making system design and manufacturing significantly easier and less expensive.